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Porous silicon carbide with tailored thermal and electrical properties

CEIT, a research center located in San Sebastian (Spain) has developed a method for producing porous SiC with tailored porosity and thus, controlled thermal and electrical properties. It was developed for fusion application as Flow Channel Inserts in high temperature Dual-Coolant Lead-Lithium (DCLL) blankets, where it served as electrical and thermal insulator. Hollow channels of complex geometries were produced and tested under a PbLi flow at 700°C. Based on gelcasting route, this know-how offers a low cost technique which is industrially scalable and allows consolidating complex shapes with high green strength. It avoids the end-capping defects that usually appear in ceramics samples produced by uniaxial pressing. This material could find application in other fields outside fusion such as filters for molten metal or high-temperature gas, volumetric absorbers of solar radiation, separation membranes, high temperature structural materials, among others.

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